sot-23-6l plastic-encapsulate transistors CJ818B transistor (pnp) descriptions the device is manfactured in lo w voltage pnp planar t echnology with ?base island ? layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. feature very low collector to emitter saturation voltage applications z power management in portable equipments z switching regulator in bat tery charge applications marking: maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -3 a p c collector dissipation 0.35 w r ja thermal resistance from junction to ambient 357 /w p tot total dissipation at t c = 25 1.2 w r jc thermal resistance from junction to case (note 1) 104.2 /w t j junction temperature 150 t stg storage temperature -55~+150 note 1 package mounted on fr4 pcb 25mm x 25mm. so t -23-6l ? 6 ? 1 ? 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,feb,2014
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -30 v collector-emitter breakdown voltage v (br)ceo * i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-100 a ,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a v ce =-1v, i c =-0.5a 100 dc current gain h fe * v ce =-3v, i c =-2.5a 100 i c =-0.5a,i b =-5ma -0.15 v i c =-1.2a,i b =-12ma -0.45 v collector-emitter saturation voltage v ce(sat) * i c =-2a,i b =-20ma -0.8 v i c =-0.5a,i b =-5ma -1.1 v i c =-1.2a,i b =-12ma -1.1 v bade-emitter saturation voltage v be(sat) * i c =-2a,i b =-20ma -1.2 v base-emitter on voltage v be(on) * i c =-0.5a, v ce =-2v -1.1 v *pulse test: pulse width 300us,duty cycle 2.0%. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,feb,2014
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 10 100 1000 -1 -10 -100 -1000 -10 -100 -1000 -0 -1 -2 -3 -4 -5 -6 -0 -300 -600 -900 0 25 50 75 100 125 150 0 100 200 300 400 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 t a =100 t a =25 common emitter v ce =-2v collcetor current i c (ma) base-emmiter voltage v be (v) v be -3000 c ob c ib v cb / v eb c ob / c ib ?? capacitance c (pf) reverse voltage v (v) f=1mhz i e =0/i c =0 t a =25 -20 CJ818B -3000 dc current gain h fe collector current i c (ma) t a =100 t a =25 i c ?? h fe ?? common emitter v ce =-1v common emitter t a =25 3.0ma 2.7ma 2.4ma 2.1ma 1.8ma 1.5ma 1.2ma 0.9ma 0.6ma i b =0.3ma collector-emitter voltage v ce (v) collector current i c (ma) static characteristic collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a i c t a =25 t a =100 =100 base-emitter saturation voltage v besat (v) collector current i c (ma) i c v besat ?? -3000 collector-emitter saturation voltage v cesat (v) collector current i c (ma) t a =100 t a =25 =100 i c v cesat ?? -3000 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,feb,2014
|
